Ristori, A, Khoury, M, Salvalaglio, M, Filippatos, A, Amato, M, Herzig, T, Meijer, J, Pezzagna, S, Hannani, D, Bollani, M, Barri, C, Ruiz, C M, Granchi, N, Intonti, F, Abbarchi, M, and Biccari, F 2023 Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters. Advanced Optical Materials, 2301608. DOI: https://doi.org/10.1002/adom.202301608

Marri, I, Grillo, S, Amato, M, Ossicini, S, and Pulci, O 2023 Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core–Shell Nanocrystals. The Journal of Physical Chemistry C, 127(2): 1209–1219. DOI: https://doi.org/10.1021/acs.jpcc.2c07024

Impellizzeri, A, Amato, M, Ewels, C P, and Zobelli, A 2022 Electronic Structure of Folded Hexagonal Boron Nitride. The Journal of Physical Chemistry C, 126(41): 17746–17752. DOI: https://doi.org/10.1021/acs.jpcc.2c05549

Badiane, K, Rodary, G, Amato, M, Gloter, A, David, C, Aubin, H, and Girard, J-C 2022 Atomic-scale visualization of the p-d hybridization in III-V semiconductor surfaces doped with transition metal impurities. Physical Review B, 105(23): 235443. DOI: https://doi.org/10.1103/PhysRevB.105.235443

Giorgi, G, Amato, M, Ossicini, S, Cartoixà, X, Canadell, E, and Rurali, R 2020 Doping of III–V Arsenide and Phosphide Wurtzite Semiconductors. The Journal of Physical Chemistry C, 124(49): 27203–27212. DOI: https://doi.org/10.1021/acs.jpcc.0c09391

Marri, I, Amato, M, Bertocchi, M, Ferretti, A, Varsano, D, and Ossicini, S 2020 Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures. Physical Chemistry Chemical Physics, 22: 25593–25605. DOI: https://doi.org/10.1039/D0CP04013D

Amato, M, Kaewmaraya, T, and Zobelli, A 2020 Extrinsic Doping in Group IV Hexagonal-Diamond-Type Crystals. The Journal of Physical Chemistry C, 124(31): 17290–17298. DOI: https://doi.org/10.1021/acs.jpcc.0c03713

Kalita, D, Amato, M, Artaud, A, Marty, L, Bouchiat, V, Coraux, J, Brouder, C, Lazzeri, M, and Bendiab, N 2020 Fermi resonance in the Raman spectrum of graphene. Physical Review B, 102. DOI: https://doi.org/10.1103/PhysRevB.102.075436

Ossicini, S, Marri, I, Amato, M, Palummo, M, Canadell, E, and Rurali, R 2020 Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase. Faraday Discussions, 222(0): 217–239. DOI: https://doi.org/10.1039/C9FD00085B

Galvão Tizei, L H and Amato, M 2020 Electronic structure and optical properties of semiconductor nanowires polytypes. The European Physical Journal B, 93(1): 16. DOI: https://doi.org/10.1140/epjb/e2019-100375-7

Amato, M, Ossicini, S, Canadell, E, and Rurali, R 2019 Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires. Nano Letters, 19(2): 866–876. DOI: https://doi.org/10.1021/acs.nanolett.8b04083

Berbezier, I, David, T, Ronda, A, Favre, L, Gailhanou, M, Gentile, P, Buttard, D, Calvo, V, Amato, M, and Aqua, J-N 2018 (Invited) Strain Assisted Band Gap Engineering of SiGe Core–Shell Nanowires using Low-Temperature Condensation Process. ECS Meeting Abstracts, MA2018-01(16): 1172. DOI: https://doi.org/10.1149/MA2018-01/16/1172

Fasolato, C, De Luca, M, Djomani, D, Vincent, L, Renard, C, Di Iorio, G, Paillard, V, Amato, M, Rurali, R, and Zardo, I 2018 Crystalline, Phononic, and Electronic Properties of Heterostructured Polytypic Ge Nanowires by Raman Spectroscopy. Nano Letters, 18(11): 7075–7084. DOI: https://doi.org/10.1021/acs.nanolett.8b03073

Marri, I, Amato, M, Guerra, R, and Ossicini, S 2018 First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications. Physica Status Solidi B-Basic Solid State Physics, 255(10). DOI: https://doi.org/10.1002/pssb.201700627

Kaewmaraya, T, Vincent, L, and Amato, M 2017 Accurate Estimation of Band Offsets in Group IV Polytype Junctions: A First-Principles Study. The Journal of Physical Chemistry C, 121(10): 5820–5828. DOI: https://doi.org/10.1021/acs.jpcc.6b12782

Bertocchi, M, Amato, M, Marri, I, and Ossicini, S 2017 Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study. physica status solidi c, 14(12): 1700193. DOI: https://doi.org/10.1002/pssc.201700193

David, T, Liu, K, Ronda, A, Favre, L, Abbarchi, M, Gailhanou, M, Gentile, P, Buttard, D, Calvo, V, Amato, M, Aqua, J-N, and Berbezier, I 2017 Tailoring Strain and Morphology of Core-Shell SiGe Nanowires by Low-Temperature Ge Condensation. Nano Letters, 17(12): 7299–7305. DOI: https://doi.org/10.1021/acs.nanolett.7b02832

Amato, M, Kaewmaraya, T, Zobelli, A, Palummo, M, and Rurali, R 2016 Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions. Nano Letters, 16(9): 5694–5700. DOI: https://doi.org/10.1021/acs.nanolett.6b02362

Amato, M, Bertocchi, M, and Ossicini, S 2016 Work function bowing in Si1−xGex heterostructures: Ab initio results. Journal of Applied Physics, 119(8): 085705. DOI: https://doi.org/10.1063/1.4942526

Amato, M and Rurali, R 2016 Surface physics of semiconducting nanowires. Progress in Surface Science, 91(1): 1–28. DOI: https://doi.org/10.1016/j.progsurf.2015.11.001

Pouch, S, Amato, M, Bertocchi, M, Ossicini, S, Chevalier, N, Mélin, T, Hartmann, J-M, Renault, O, Delaye, V, Mariolle, D, and Borowik, Ł 2015 Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy. The Journal of Physical Chemistry C, 119(47): 26776–26782. DOI: https://doi.org/10.1021/acs.jpcc.5b09278

Amato, M and Rurali, R 2015 Shell-Thickness Controlled Semiconductor–Metal Transition in Si–SiC Core–Shell Nanowires. Nano Letters, 15(5): 3425–3430. DOI: https://doi.org/10.1021/acs.nanolett.5b00670

De Sio, A, Falke, S M, Rozzi, C A, Brida, D, Maiuri, M, Amato, M, Sommer, E, Rubio, A, Cerullo, G, Molinari, E, and Lienau, C 2015 Coherent Ultrafast Charge Transfer in an Organic Photovoltaic Blend. In: Yamanouchi, K, Cundiff, S, de Vivie-Riedle, R, Kuwata-Gonokami, M, and DiMauro, L (eds.), Ultrafast Phenomena XIX. Cham: Springer International Publishing. pp. 557–560. DOI: https://doi.org/10.1007/978-3-319-13242-6_136

Amato, M, Rurali, R, Palummo, M, and Ossicini, S 2014 Understanding doping at the nanoscale: the case of codoped Si and Ge nanowires. Journal of Physics D: Applied Physics, 47(39): 394013. DOI: https://doi.org/10.1088/0022-3727/47/39/394013

Zobelli, A, Bourrellier, R, Amato, M, Meuret, S, Tizei, L H G, Giorgetti, C, Gloter, A, Heggie, M I, March, K, Stephan, O, Reining, L, and Kociak, M 2014 Nanometric Resolved Cathodoluminescence on Few-Layer h-BN Flakes. Microscopy and Microanalysis, 20(S3): 1746–1747. DOI: https://doi.org/10.1017/S1431927614010460

Bourrellier, R, Amato, M, Tizei, L H G, Giorgetti, C, Gloter, A, Heggie, M I, March, K, Stéphan, O, Reining, L, Kociak, M, and Zobelli, A 2014 Nanometric Resolved Luminescence in h-BN Flakes: Excitons and Stacking Order. ACS Photonics, 1. DOI: https://doi.org/10.1021/ph500141j Download

Falke, S M, Rozzi, C A, Brida, D, Maiuri, M, Amato, M, Sommer, E, Sio, A D, Rubio, A, Cerullo, G, Molinari, E, and Lienau, C 2014 Coherent ultrafast charge transfer in an organic photovoltaic blend. Science. DOI: https://doi.org/10.1126/science.1249771

Amato, M, Palummo, M, Rurali, R, and Ossicini, S 2014 Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications. Chemical Reviews, 114(2): 1371–1412. DOI: https://doi.org/10.1021/cr400261y

Amato, M, Palummo, M, Ossicini, S, and Rurali, R 2014 SiGe Nanowires for Thermoelectrics Applications. In: Wang, X and Wang, Z M (eds.), Nanoscale Thermoelectrics. Cham: Springer International Publishing. pp. 497–515. DOI: https://doi.org/10.1007/978-3-319-02012-9_16

Valitova, I, Amato, M, Mahvash, F, Cantele, G, Maffucci, A, Santato, C, Martel, R, and Cicoira, F 2013 Carbon nanotube electrodes in organic transistors. Nanoscale, 5(11): 4638–4646. DOI: https://doi.org/10.1039/C3NR33727H

Amato, M, Palummo, M, Rurali, R, and Ossicini, S 2012 Optical absorption modulation by selective codoping of SiGe core-shell nanowires. Journal of Applied Physics, 112(11): 114323. DOI: https://doi.org/10.1063/1.4768475

Amato, M, Rurali, R, and Ossicini, S 2012 Doping of SiGe core-shell nanowires. Journal of Computational Electronics, 11(3): 272–279. DOI: https://doi.org/10.1007/s10825-012-0394-y

Rurali, R, Amato, M, and Ossicini, S 2012 Band-offset driven efficiency of the doping of SiGe core-shell nanowires. In: 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO). Presented at the 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO). pp. 1–4. DOI: https://doi.org/10.1109/NANO.2012.6322117

Amato, M, Ossicini, S, and Rurali, R 2012 Electron Transport in SiGe Alloy Nanowires in the Ballistic Regime from First-Principles. Nano Letters, 12(6): 2717–2721. DOI: https://doi.org/10.1021/nl204313v

Amato, M, Palummo, M, and Ossicini, S 2012 Band structure analysis in SiGe nanowires. Materials Science and Engineering: B, 177(10): 705–711. DOI: https://doi.org/10.1016/j.mseb.2011.10.008

Amato, M, Ossicini, S, and Rurali, R 2011 Band-Offset Driven Efficiency of the Doping of SiGe Core−Shell Nanowires. Nano Letters, 11(2): 594–598. DOI: https://doi.org/10.1021/nl103621s

Palummo, M, Amato, M, and Ossicini, S 2010 Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects. Physical Review B, 82(7): 073305. DOI: https://doi.org/10.1103/PhysRevB.82.073305

Ossicini, S, Amato, M, Guerra, R, Palummo, M, and Pulci, O 2010 Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results. Nanoscale Research Letters, 5(10): 1637. DOI: https://doi.org/10.1007/s11671-010-9688-9

Amato, M, Palummo, M, and Ossicini, S 2010 Segregation, quantum confinement effect and band offset for [110] SiGe NWs. physica status solidi (b), 247(8): 2096–2101. DOI: https://doi.org/10.1002/pssb.200983931

Amato, M, Palummo, M, and Ossicini, S 2009 SiGe nanowires: Structural stability, quantum confinement, and electronic properties. Physical Review B, 80(23): 235333. DOI: https://doi.org/10.1103/PhysRevB.80.235333

Amato, M, Palummo, M, and Ossicini, S 2009 Reduced quantum confinement effect and electron-hole separation in SiGe nanowires. Physical Review B, 79(20): 201302. DOI: https://doi.org/10.1103/PhysRevB.79.201302