Ingap states in hexagonal diamond silicon
The study of “Acceptor and donor impurity levels in hexagonal-diamond silicon” appeared in Phys. Rev. Materials 8, 114601 (2024). The effect of p- and n-type substitutional doping on the structural …
New insight into charge transfer in h-BN
The charge density distribution, which fully defines the ground-state properties of a material system, can be accurately measured in single crystals using X-ray diffraction. However, there is still a lack …