Ultrafast carrier dynamics in GeAs

The paper on “Direct observation of electronic band gap and hot carrier dynamics in GeAs” has been published in Appl. Phys. Lett. 125, 182106 (2024).

Ingap states in hexagonal diamond silicon

The study of “Acceptor and donor impurity levels in hexagonal-diamond silicon” appeared in Phys. Rev. Materials 8, 114601 (2024). The effect of p- and n-type substitutional doping on the structural …

New insight into charge transfer in h-BN

The charge density distribution, which fully defines the ground-state properties of a material system, can be accurately measured in single crystals using X-ray diffraction. However, there is still a lack …

Topological insulators under ultrafast light

The electronic structure of prototype topological insulators has been studied with ultrafast ARPES, using the ARTOF spectrometer in combination with the femtosecond laser source at the LPS. Using time-resolved multi-dimensional …