funding: 720 000 €
Partners :
- LPS UMR 8502 (Orsay): J. Gabelli (coordinator), J. Estève, M. Aprili, R. Weil, S. Gauthier.
- ICB UMR 6303 (Dijon): A. Bouhélier (PI), G. Colas des Francs, K. Hammani, L. Markey, J-M. Arcas Garcia.
- IM2NP UMR 7334 (Marseille): F. Michelini (PI), M. Bescond.
- CPT UMR 7332 (Marseille): A. Crépieux.
Traditional plasmonic devices rely on off-chip optical sources, but recent advances in electrically-driven nanoscale plasmonic sources, such as surface plasmon polariton (SPP) sources based on inelastic electron tunneling (IET) in metal-insulator-metal (MIM) junctions, have garnered attention. These innovations eliminate the need for complex semiconductor integration, offering scalable and efficient solutions for on-chip light sources.
While significant technological progress has been made, challenges remain in understanding the detailed electronic processes underlying IET photon emission. Unlike well-characterized phenomena in the microwave domain, such as shot noise and photon emission, the high-bias, nonlinear regimes of IET in the visible to near-infrared spectrum demand new theoretical frameworks. Advances in this understanding are crucial for developing future devices that exploit IET for efficient, compact plasmonic systems. In this project, we aim to go beyond the state of the art by developing a new theoretical framework utilizing the Non-Equilibrium Green’s Function (NEGF) method for investigating IET within the tunnel junction. Additionally, we propose an innovative approach for engineering the electromagnetic coupling environment of the MIM junction by incorporating resonant cavities. Finally, our theoretical approach will enable us to identify new correlators linking electron current fluctuations in the MIM junction to the plasmonic field displaying strong quantum fluctuations. Measuring these correlations requires the use of a sensitive (low noise) and fast plasmon transceiver. We therefore aim to develop a plasmon on-chip detector based on Kinetic inductance technology.